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Si2377EDS
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( Ω )
0.061 at V GS = - 4.5 V
0.080 at V GS = - 2.5 V
0.110 at V GS = - 1.8 V
0.165 at V GS = - 1.5 V
I D (A) a
- 4.4
- 3.8
- 3.3
- 0.5
Q g (Typ.)
7.6 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? Typical ESD Performance 2000 V
? Built in ESD Protection with Zener Diode
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Load Switch for Portable Devices
TO-236
(SOT-23)
S
G
1
3
D
S
2
Top V ie w
Si2377EDS (P6)*
* Marking Code
G
R
D
Orderin g Information: Si2377EDS-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 20
±8
- 4.4
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
- 3.5
- 3.7 b, c
- 2.9 b, c
- 20
- 1.5
- 1.0 b, c
1.8
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
1.1
1.25 b, c
W
T A = 70 °C
0.8 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
R thJA
R thJF
80
55
100
70
°C/W
Notes:
a. T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.
Document Number: 65905
S10-0542-Rev. A, 08-Mar-10
www.vishay.com
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